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SPI11N60C3

Part No.:
SPI11N60C3
Download:
Download
Description:
Cool MOS Power Transistor
File Size:
195 K
Page:
14 Pages
Logo:
Maker:
INFINEON [ INFINEON TECHNOLOGIES AG ]
PCB Prototype

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PCB Datasheet:1PCB Datasheet:1
Preliminary data
SPP11N60C3, SPB11N60C3
SPI11N60C3
Cool MOS™=Power Transistor
=
Feature
•=New
revolutionary high voltage technology
Worldwide best
R
DS(on)
in TO 220
Ultra low gate charge
•=Periodic
avalanche rated
Extreme dv/dt rated
•=High
peak current capability
•=Improved
transconductance
•=150
°C operating temperature
P-TO262-3-1
C OLMOS
O
Power Semiconductors
Product Summary
V
DS
@ T
jmax
R
DS(on)
I
D
P-TO263-3-2
650
0.38
11
V
A
P-TO220-3-1
Type
SPP11N60C3
SPB11N60C3
SPI11N60C3
Package
P-TO220-3-1
P-TO263-3-2
P-TO262-3-1
Ordering Code
Q67040-S4395
Q67040-S4396
Q67042-S4403
Marking
11N60C3
11N60C3
11N60C3
Maximum Ratings,
at
T
j
= 25 °C, unless otherwise specified
Parameter
Continuous drain current
T
C
= 25 °C
T
C
= 100 °C
Symbol
I
D
Value
11
7
Unit
A
Pulsed drain current,
t
p
limited by
T
jmax
Avalanche energy, single pulse
I
D
=5.5A,
V
DD
=50V
I
D puls
E
AS
E
AR
I
AR
dv/dt
V
GS
V
GS
P
tot
T
j ,
T
stg
Page 1
33
340
0.6
11
6
±20
±30
125
-55... +150
W
°C
A
V/ns
V
mJ
Avalanche energy, repetitive
t
AR
limited by
T
jmax 1)
I
D
=11A,
V
DD
=50V
Avalanche current, repetitive
t
AR
limited by
T
jmax
Reverse diode dv/dt
I
S
=11A,
V
DS
<=V
DD
, di/dt=100A/µs,
T
jmax
=150°C
Gate source voltage static
Gate source voltage dynamic
Power dissipation,
T
C
= 25°C
Operating and storage temperature
2001-07-05

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