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VS-30BQ015PBF

Part No.:
VS-30BQ015PBF
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Description:
Schottky Rectifier, 3.0 A
File Size:
117 K
Page:
7 Pages
Logo:
Maker:
VISHAY [ VISHAY TELEFUNKEN ]
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PCB Datasheet:1PCB Datasheet:1
VS-30BQ015PbF
Vishay Semiconductors
Schottky Rectifier, 3.0 A
FEATURES
125 °C T
J
operation (V
R
< 5 V)
Optimized for OR-ing applications
Ultralow forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
Compliant to RoHS Directive 2002/95/EC
Designed and qualified for industrial level
Cathode
Anode
SMC
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
I
RM
T
J
max.
Diode variation
E
AS
SMC
3A
15 V
0.3 V
50 mA at 100 °C
125 °C
Single die
1.5 mJ
DESCRIPTION
The VS-30BQ015PbF surface mount Schottky rectifier has
been designed for applications requiring low forward drop
and very small foot prints on PC boards. The proprietary
barrier technology allows for reliable operation up to 125 °C
junction temperature. Typical applications are in disk drives,
switching power supplies, converters, freewheeling diodes,
battery charging, and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
t
p
= 5 μs sine
1.0 Apk, T
J
= 75 °C
Range
CHARACTERISTICS
Rectangular waveform
VALUES
3.0
15
650
0.30
- 55 to 125
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V
R
V
RWM
VS-30BQ015PbF
15
25
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
Maximum peak one cycle
non-repetitive surge current
Non-repetitive avalanche energy
Repetitive avalanche current
SYMBOL
I
F(AV)
TEST CONDITIONS
50 % duty cycle at T
L
= 83 °C, rectangular waveform
50 % duty cycle at T
L
= 78 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse
I
FSM
10 ms sine or 6 ms rect. pulse
E
AS
I
AR
T
J
= 25 °C, I
AS
= 0.5 A, L = 12 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
Following any rated
load condition and with
rated V
RRM
applied
VALUES
3.0
4.0
650
75
1.5
0.5
mJ
A
A
UNITS
Document Number: 94178
Revision: 23-Feb-11
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
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