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IPP04N03LBG,IPP04N03LBG_08

Part No.:
IPP04N03LBG,IPP04N03LBG_08
Download:
Download
Description:
OptiMOS2 Power-Transistor
File Size:
275 K
Page:
9 Pages
Logo:
Maker:
INFINEON [ INFINEON TECHNOLOGIES AG ]
PCB Prototype

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PCB Datasheet:1PCB Datasheet:1
IPP04N03LB G
OptiMOS
®
2 Power-Transistor
Features
• Ideal for high-frequency dc/dc converters
• Qualified according to JEDEC for target application
• N-channel - Logic level
• Excellent gate charge x
R
DS(on)
product (FOM)
• Very low on-resistance
R
DS(on)
• Superior thermal resistance
• 175 °C operating temperature
• dv /dt rated
• Pb-free lead plating; RoHS compliant
1)
Product Summary
V
DS
R
DS(on),max
I
D
30
3.8
80
V
mΩ
A
PG-TO220-3-1
Type
IPP04N03LB G
Package
PG-TO220-3-1
Marking
04N03LB
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol Conditions
I
D
T
C
=25 °C
2)
T
C
=100 °C
Pulsed drain current
Avalanche energy, single pulse
Reverse diode dv /dt
Gate source voltage
4)
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
1)
Value
80
80
320
270
6
±20
Unit
A
I
D,pulse
E
AS
dv /dt
V
GS
P
tot
T
j
,
T
stg
T
C
=25 °C
3)
I
D
=80 A,
R
GS
=25
I
D
=80 A,
V
DS
=20 V,
di /dt =200 A/µs,
T
j,max
=175 °C
mJ
kV/µs
V
W
°C
T
C
=25 °C
107
-55 ... 175
55/175/56
J-STD20 and JESD22
Rev. 0.95
page 1
2008-05-06

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