Click to GetQuote by Sales Representative

IRLZ24NLPBF,IRLZ24NSPBF

Part No.:
IRLZ24NLPBF,IRLZ24NSPBF
Download:
Download
Description:
HEXFET Power MOSFET
File Size:
301 K
Page:
10 Pages
Logo:
Maker:
IRF [ INTERNATIONAL RECTIFIER ]
PCB Prototype

February 13, 2018:

IRPT2064A

ISPGDX160VA-9B208I

ISPPAC-CLK5620V-01TN100C

ITS4141D

JM38510/65604BRA

KSF0A410LFT

L6730

L6918DTR

LBC2016T3R3M

LC786961W

LG-110HYS-CT

LM317M

PCB Datasheet:1PCB Datasheet:1
Logic-Level Gate Drive
l
Advanced Process Technology
l
Surface Mount (IRLZ24NS)
l
Low-profile through-hole (IRLZ24NL)
l
175°C Operating Temperature
l
Fast Switching
l
Fully Avalanche Rated
l
Lead-Free
Description
l
HEXFET
®
Power MOSFET
D
IRLZ24NSPbF
IRLZ24NLPbF
V
DSS
= 55V
R
DS(on)
= 0.06Ω
PD - 95584
G
I
D
= 18A
S
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The D
2
Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D
2
Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRLZ24NL) is available for low-
profile applications.
D 2 Pak
TO-262
Absolute Maximum Ratings
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Parameter
Continuous Drain Current, V
GS
@ 10V…
Continuous Drain Current, V
GS
@ 10V…
Pulsed Drain Current
…
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚…
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
ƒ…
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
18
13
72
3.8
45
0.30
±16
68
11
4.5
5.0
-55 to + 175
300 (1.6mm from case )
Units
A
W
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Parameter
R
θJC
R
θJA
Junction-to-Case
Junction-to-Ambient ( PCB Prototype Mounted,steady-state)**
Typ.
–––
–––
Max.
3.3
40
Units
°C/W
www.irf.com
1
07/20/04

Contact Us: Please send Gerbers to service@pcbindex.com for quotation

PCBIndex.com,All Rights Reserved