MMBT918

Part No.:
MMBT918
Download:
Download
Description:
NPN RF Transistor
File Size:
151 K
Page:
7 Pages
Logo:
Maker:
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
PCB Prototype

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PCB Datasheet:1
PN918 / MMBT918
Discrete POWER & Signal
Technologies
PN918
MMBT918
C
E
C
B
TO-92
E
SOT-23
Mark: 3B
B
NPN RF Transistor
This device is designed for use as RF amplifiers, oscillators and
multipliers with collector currents in the 1.0 mA to 30 mA range.
Sourced from Process 43.
Absolute Maximum Ratings*
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
Value
15
30
3.0
50
-55 to +150
Units
V
V
V
mA
°C
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
θ
JC
R
θJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
PN918
350
2.8
125
357
Max
*MMBT918
225
1.8
556
Units
mW
mW/°C
°C/W
°C/W
*
Device mounted on FR-4 Cheap PCB Manufacturing 1.6" X 1.6" X 0.06."
©1997
Fairchild Semiconductor Corporation