2743019447

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2743019447
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Description:
RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
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Maker:
FREESCALE [ FREESCALE SEMICONDUCTOR, INC ]
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July 16, 2018:

2795G

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2BHR44VUSMT

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PCB Datasheet:1PCB Datasheet:1PCB Datasheet:1PCB Datasheet:1
Freescale Semiconductor
Technical Data
Document Number: MRF6V2300N
Rev. 5, 4/2010
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed primarily for CW large--signal output and driver applications with
frequencies up to 600 MHz. Devices are unmatched and are suitable for use in
industrial, medical and scientific applications.
Typical CW Performance: V
DD
= 50 Volts, I
DQ
= 900 mA,
P
out
= 300 Watts, f = 220 MHz
Power Gain — 25.5 dB
Drain Efficiency — 68%
Capable of Handling 10:1 VSWR, @ 50 Vdc, 220 MHz, 300 Watts CW
Output Power
Features
Characterized with Series Equivalent Large--Signal Impedance Parameters
Qualified Up to a Maximum of 50 V
DD
Operation
Integrated ESD Protection
225°C Capable Plastic Package
RoHS Compliant
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
MRF6V2300NR1
MRF6V2300NBR1
10-
-600 MHz, 300 W, 50 V
LATERAL N-
-CHANNEL
SINGLE-
-ENDED
BROADBAND
RF POWER MOSFETs
CASE 1486-
-03, STYLE 1
TO-
-270 WB-
-4
PLASTIC
MRF6V2300NR1
CASE 1484-
-04, STYLE 1
TO-
-272 WB-
-4
PLASTIC
MRF6V2300NBR1
PARTS ARE SINGLE-
-ENDED
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
Symbol
V
DSS
V
GS
T
stg
T
C
T
J
Value
--0.5, +110
--0.5, +10
-- 65 to +150
150
225
Unit
Vdc
Vdc
°C
°C
°C
(Top View)
Symbol
R
θJC
Value
(2,3)
0.24
Unit
°C/W
Note: Exposed backside of the package is
the source terminal for the transistor.
RF
in
/V
GS
RF
out
/V
DS
RF
in
/V
GS
RF
out
/V
DS
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 83°C, 300 W CW
Figure 1. Pin Connections
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Class
2 (Minimum)
A (Minimum)
IV (Minimum)
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
©
Freescale Semiconductor, Inc., 2007--2008, 2010. All rights reserved.
MRF6V2300NR1 MRF6V2300NBR1
1
RF Device Data
Freescale Semiconductor