MMG3006NT1,MMG3006NT1_08

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MMG3006NT1,MMG3006NT1_08
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Description:
Heterojunction Bipolar Transistor Technology (InGaP HBT)
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FREESCALE [ FREESCALE SEMICONDUCTOR, INC ]
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Freescale Semiconductor
Technical Data
Document Number: MMG3006NT1
Rev. 2, 3/2008
Heterojunction Bipolar Transistor
Technology (InGaP HBT)
Broadband High Linearity Amplifier
The MMG3006NT1 is a General Purpose Amplifier that is internally in-
put prematched and designed for a broad range of Class A, small - signal,
high linearity, general purpose applications. It is suitable for applications
with frequencies from 400 to 2400 MHz such as Cellular, PCS, WLL, PHS,
VHF, UHF, UMTS and general small - signal RF.
Features
Frequency: 400 - 2400 MHz
P1dB: 33 dBm @ 900 MHz
Small - Signal Gain: 17.5 dB @ 900 MHz
Third Order Output Intercept Point: 49 dBm @ 900 MHz
Single 5 Volt Supply
Internally Input Prematched to 50 Ohms
RoHS Compliant
In Tape and Reel. T1 Suffix = 1,000 Units per 12 mm, 13 inch Reel.
MMG3006NT1
400 - 2400 MHz, 17.5 dB
33 dBm
InGaP HBT
CASE 1898 - 01
QFN 4x4
PLASTIC
Table 1. Typical Performance
(1)
Characteristic
Small - Signal Gain
(S21)
Input Return Loss
(S11)
Output Return Loss
(S22)
Power Output @1dB
Compression
Third Order Output
Intercept Point
Symbol
G
p
IRL
ORL
P1db
IP3
900
MHz
17.5
-8
- 13
33
49
1960
MHz
14
-9
- 14
33
49
2140
MHz
14
- 12
- 18
33
49
Unit
dB
dB
dB
dBm
dBm
Table 2. Maximum Ratings
Rating
Supply Voltage
Supply Current
RF Input Power
Storage Temperature Range
Junction Temperature
(2)
Symbol
V
DC
I
DC
P
in
T
stg
T
J
Value
6
1400
28
- 65 to +150
150
Unit
V
mA
dBm
°C
°C
2. For reliable operation, the junction temperature should not
exceed 150°C.
1. V
DC
= 5 Vdc, T
C
= 25°C, 50 ohm system
Table 3. Thermal Characteristics
(V
DC
= 5 Vdc, I
DC
= 850 mA, T
C
= 25°C)
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Value
(3)
7.8
Unit
°C/W
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
©
Freescale Semiconductor, Inc., 2008. All rights reserved.
MMG3006NT1
1
RF Device Data
Freescale Semiconductor