MRF6VP11KHR6_10

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MRF6VP11KHR6_10
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Description:
RF Power Field Effect Transistor
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11 Pages
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FREESCALE [ FREESCALE SEMICONDUCTOR, INC ]
PCB Prototype

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PCB Datasheet:1PCB Datasheet:1
Freescale Semiconductor
Technical Data
Document Number: MRF6VP11KH
Rev. 7, 4/2010
RF Power Field Effect Transistor
N--Channel Enhancement--Mode Lateral MOSFET
Designed primarily for pulsed wideband applications with frequencies up to
150 MHz. Device is unmatched and is suitable for use in industrial, medical
and scientific applications.
Typical Pulsed Performance at 130 MHz: V
DD
= 50 Volts, I
DQ
= 150 mA,
P
out
= 1000 Watts Peak (200 W Avg.), Pulse Width = 100
μsec,
Duty Cycle = 20%
Power Gain — 26 dB
Drain Efficiency — 71%
Capable of Handling 10:1 VSWR, @ 50 Vdc, 130 MHz, 1000 Watts Peak
Power
Features
Characterized with Series Equivalent Large--Signal Impedance Parameters
CW Operation Capability with Adequate Cooling
Qualified Up to a Maximum of 50 V
DD
Operation
Integrated ESD Protection
Designed for Push--Pull Operation
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
RoHS Compliant
In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
MRF6VP11KHR6
1.8-
-150 MHz, 1000 W, 50 V
LATERAL N-
-CHANNEL
BROADBAND
RF POWER MOSFET
CASE 375D-
-05, STYLE 1
NI-
-1230
PART IS PUSH-
-PULL
RF
inA
/V
GSA
3
1 RF
outA
/V
DSA
RF
inB
/V
GSB
4
2 RF
outB
/V
DSB
(Top View)
Figure 1. Pin Connections
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
Symbol
V
DSS
V
GS
T
stg
T
C
T
J
Value
--0.5, +110
--6.0, +10
-- 65 to +150
150
225
Unit
Vdc
Vdc
°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 1000 W Pulsed, 100
μsec
Pulse Width, 20% Duty Cycle
Case Temperature 67°C, 1000 W CW, 100 MHz
Symbol
Z
θJC
R
θJC
Value
(2,3)
0.03
0.13
Unit
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
©
Freescale Semiconductor, Inc., 2008--2010. All rights reserved.
MRF6VP11KHR6
1
RF Device Data
Freescale Semiconductor