MRF7P20040HR3,MRF7P20040HSR3

Part No.:
MRF7P20040HR3,MRF7P20040HSR3
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Description:
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
File Size:
201 K
Page:
16 Pages
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Maker:
FREESCALE [ FREESCALE SEMICONDUCTOR, INC ]
PCB Prototype

July 16, 2018:

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PCB Datasheet:1PCB Datasheet:1
Freescale Semiconductor
Technical Data
Document Number: MRF7P20040H
Rev. 1, 8/2009
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 2010 to
2025 MHz. Can be used in Class AB and Class C for all typical cellular base
station modulation formats.
Typical Doherty Single - Carrier W - CDMA Performance: V
DD
= 32 Volts,
I
DQA
= 150 mA, V
GSB
= 1.5 Vdc, P
out
= 10 Watts Avg., Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @ 0.01% Probability
on CCDF.
Frequency
2025 MHz
G
ps
(dB)
18.2
h
D
(%)
42.6
Output PAR
(dB)
7.3
ACPR
(dBc)
- 34.8
MRF7P20040HR3
MRF7P20040HSR3
2010 - 2025 MHz, 10 W AVG., 32 V
SINGLE W - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
Capable of Handling 5:1 VSWR, @ 32 Vdc, 2017.5 MHz, 50 Watts CW
Output Power (3 dB Input Overdrive from Rated P
out
)
Typical P
out
@ 3 dB Compression Point
]
50 Watts CW
Features
Production Tested in a Symmetrical Doherty Configuration
100% PAR Tested for Guaranteed Output Power Capability
Characterized with Series Equivalent Large - Signal Impedance Parameters
and Common Source S - Parameters
Internally Matched for Ease of Use
Integrated ESD Protection
Greater Negative Gate - Source Voltage Range for Improved Class C
Operation
RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
CASE 465M - 01, STYLE 1
NI - 780 - 4
MRF7P20040HR3
CASE 465H - 02, STYLE 1
NI - 780S - 4
MRF7P20040HSR3
RF
inA
/V
GSA
3
1 RF
outA
/V
DSA
RF
inB
/V
GSB
4
2 RF
outB
/V
DSB
(Top View)
Figure 1. Pin Connections
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
Symbol
V
DSS
V
GS
V
DD
T
stg
T
C
T
J
Value
- 0.5, +65
- 6.0, +10
32, +0
- 65 to +150
150
225
Unit
Vdc
Vdc
Vdc
°C
°C
°C
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf. Select Documentation/
Application Notes - AN1955.
©
Freescale Semiconductor, Inc., 2009. All rights reserved.
MRF7P20040HR3 MRF7P20040HSR3
1
RF Device Data
Freescale Semiconductor