IPB039N04LG

Part No.:
IPB039N04LG
Download:
Download
Description:
OptiMOS3 Power-Transistor
File Size:
340 K
Page:
10 Pages
Logo:
Maker:
INFINEON [ INFINEON TECHNOLOGIES AG ]
PCB Prototype

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PCB Datasheet:1PCB Datasheet:1
Type
IPP039N04L G
IPB039N04L G
OptiMOS
®
3 Power-Transistor
Features
• Fast switching MOSFET for SMPS
• Optimized technology for DC/DC converters
• Qualified according to JEDEC
1)
for target applications
• N-channel, logic level
• Excellent gate charge x
R
DS(on)
product (FOM)
• Very low on-resistance
R
DS(on)
• 100% Avalanche tested
• Pb-free plating; RoHS compliant
Type
IPB039N04L G
IPP039N04L G
Product Summary
V
DS
R
DS(on),max
I
D
40
3.9
80
V
mΩ
A
Package
Marking
PG-TO263-3
039N04L
PG-TO220-3
039N04L
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol Conditions
I
D
V
GS
=10 V,
T
C
=25 °C
V
GS
=10 V,
T
C
=100 °C
V
GS
=4.5 V,
T
C
=25 °C
V
GS
=4.5 V,
T
C
=100 °C
Pulsed drain current
2)
Avalanche current, single pulse
3)
Avalanche energy, single pulse
Gate source voltage
1)
Value
80
80
80
73
400
80
60
±20
Unit
A
I
D,pulse
I
AS
E
AS
V
GS
T
C
=25 °C
T
C
=25 °C
I
D
=80 A,
R
GS
=25
mJ
V
J-STD20 and JESD22
Rev. 1.0
page 1
2007-12-11