IPB80N06S4L-07

Part No.:
IPB80N06S4L-07
Download:
Download
Description:
OptiMOS-T2 Power-Transistor
File Size:
171 K
Page:
9 Pages
Logo:
Maker:
INFINEON [ INFINEON TECHNOLOGIES AG ]
PCB Prototype

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PCB Datasheet:1PCB Datasheet:1PCB Datasheet:1
IPB80N06S4L-07
IPI80N06S4L-07, IPP80N06S4L-07
OptiMOS
®
-T2
Power-Transistor
Product Summary
V
DS
R
DS(on),max
(SMD version)
I
D
60
6.4
80
V
mΩ
A
Features
• N-channel - Enhancement mode
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
Type
IPB80N06S4L-07
IPI80N06S4L-07
IPP80N06S4L-07
Package
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
Marking
4N06L07
4N06L07
4N06L07
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
1)
Symbol
I
D
Conditions
T
C
=25°C,
V
GS
=10V
T
C
=100°C,
V
GS
=10V
2)
Pulsed drain current
2)
Avalanche energy, single pulse
2)
Avalanche current, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
I
D,pulse
E
AS
I
AS
V
GS
P
tot
T
j
,
T
stg
T
C
=25°C
I
D
=40A
-
-
T
C
=25°C
-
-
Value
80
58
320
71
80
±16
79
-55 ... +175
55/175/56
mJ
A
V
W
°C
Unit
A
Rev. 1.0
page 1
2009-03-24