IPS110N12N3G

Part No.:
IPS110N12N3G
Download:
Download
Description:
OptiMOSTM3Power-Transistor
File Size:
324 K
Page:
10 Pages
Logo:
Maker:
INFINEON [ INFINEON TECHNOLOGIES AG ]
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PCB Datasheet:1PCB Datasheet:1
IPD110N12N3 G
IPS110N12N3 G
OptiMOS
3Power-Transistor
TM
Features
• N-channel, normal level
• Excellent gate charge x
R
DS(on)
product (FOM)
• Very low on-resistance
R
DS(on)
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant; halogen free
• Qualified according to JEDEC
1)
for target application
Product Summary
V
DS
R
DS(on),max
I
D
120
11
75
V
A
• Ideal for high-frequency switching and synchronous rectification
Type
IPS110N12N3 G
IPD110N12N3 G
Package
Marking
PG-TO251-3
110N12N
PG-TO252-3
110N12N
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol Conditions
I
D
T
C
=25 °C
T
C
=100 °C
Pulsed drain current
2)
Avalanche energy, single pulse
Gate source voltage
3)
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
1)
Value
75
54
300
120
±20
Unit
A
I
D,pulse
E
AS
V
GS
P
tot
T
j
,
T
stg
T
C
=25 °C
I
D
=75 A,
R
GS
=25
Ω
mJ
V
W
°C
T
C
=25 °C
136
-55 ... 175
55/175/56
J-STD20 and JESD22
see figure 3
2)
3)
T
jmax
=150°C and duty cycle D=0.01 for V
gs
<-5V
Rev. 2.2
page 1
2009-07-09