PTFB182503EL,PTFB182503FL

Part No.:
PTFB182503EL,PTFB182503FL
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Description:
Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1805-1880 MHz
File Size:
606 K
Page:
12 Pages
Logo:
Maker:
INFINEON [ INFINEON TECHNOLOGIES AG ]
PCB Prototype

July 16, 2018:

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PCB Datasheet:1PCB Datasheet:1
PTFB182503EL
PTFB182503FL
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs
240 W, 1805 – 1880 MHz
Description
The PTFB182503EL and PTFB182503FL are 240-watt LDMOS FETs
intended for use in multi-standard cellular power amplifier applications
in the 1805 to 1880 MHz frequency band. Features include input
and output matching, high gain, wide signal bandwidth and reduced
memory effects for improved DPD correctability. Manufactured with
Infineon's advanced LDMOS process, these devices provide excellent
thermal performance and superior reliability.
PTFB182503EL
H-33288-6
PTFB182503FL
H-34288-4/2
V
DD
= 30 V, I
DQ
= 1.85 A, ƒ = 1842 MHz, 3GPP
WCDMA signal, PAR = 7.5 dB,
10 MHz carrier spacing
-30
35
30
Two-carrier WCDMA Drive-up
Features
Broadband internal input and output matching
Enhanced for use in DPD error correction systems
Typical two-carrier WCDMA performance,
1880 MHz, 30 V
- Average output power = 50 W
- Linear gain = 19 dB
- Drain efficiency = 28 %
- Intermodulation distortion = –35 dBc
Typical CW performance, 1880 MHz, 30 V
- Output power at P
1dB
= 240 W
- Efficiency = 55%
Increased negative gate-source voltage range for
improved performance in Doherty peaking amplifiers
Integrated ESD protection. Human Body Model,
Class 2 (minimum)
Capable of handling 10:1 VSWR @ 30 V, 240 W
(CW) output power
Pb-free, RoHS-compliant
IM3 (dBc), ACPR (dBc)
-35
Efficiency
-40
-45
-50
-55
38
40
42
44
46
48
50
25
20
Drain Efficiency (%)
IM3
ACPR
15
10
5
Average Output Power (dBm)
RF Characteristics
V
DD
= 30 V, I
DQ
= 1.85 A, P
OUT
= 50 W average
ƒ
1
= 1840 MHz, ƒ
2
= 1845 MHz, 3GPP signal, channel bandwidth = 3.84 MHz , peak/average = 7.5 dB @ 0.01% CCDF
Two-carrier WCDMA Specifications
(tested in Infineon test fixture)
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
All published data at T
CASE
= 25°C unless otherwise indicated
Symbol
G
ps
Min
18
27
Typ
19
28
–35
Max
–31
Unit
dB
%
dBc
h
D
IMD
ESD:
Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 12
Rev. 06, 2010-11-09