SPA12N50C3

Part No.:
SPA12N50C3
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Description:
Cool MOS™ Power Transistor Feature New revolutionary high voltage technology
File Size:
640 K
Page:
14 Pages
Logo:
Maker:
INFINEON [ INFINEON TECHNOLOGIES AG ]
PCB Prototype

July 16, 2018:

SPF-2086T

SR1050K

SS12

SSL2108

SSM2166_08

ST5-88

STA2500D_10

STK401-070

STK672-442A-E

SUP65P04-15

T4519

T5761-TGQ

PCB Datasheet:1PCB Datasheet:1
SPP12N50C3
SPI12N50C3,
SPA12N50C3
Cool MOS™ Power Transistor
Feature
New revolutionary high voltage technology
Ultra low gate charge
Periodic avalanche rated
Extreme dv/dt rated
Ultra low effective capacitances
Improved transconductance
P-TO220-3-31
1
2
3
V
DS
@
T
jmax
R
DS(on)
I
D
FP
PG-TO220-3-31
PG-TO262-
560
0.38
11.6
PG-TO220
2
V
A
1
23
P-TO220-3-1
PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute)
Type
Package
Ordering Code
SPP12N50C3
PG-TO220
Q67040-S4579
Marking
12N50C3
12N50C3
12N50C3
SPI12N50C3
PG-TO262
Q67040-S4578
SPA12N50C3
Maximum Ratings
Parameter
PG-TO220FP
SP000216322
Symbol
Value
Unit
SPP_I
SPA
Continuous drain current
T
C
= 25 °C
T
C
= 100 °C
I
D
A
11.6
7
11.6
1)
7
1)
Pulsed drain current,
t
p
limited by
T
jmax
Avalanche energy, single pulse
I
D
=5.5A,
V
DD
=50V
I
D puls
34.8
34.8
A
E
AS
340
340
mJ
Avalanche energy, repetitive
t
AR
limited by
T
jmax
2)
I
D
=11.6A,
V
DD
=50V
E
AR
0.6
11.6
0.6
11.6
A
Avalanche current, repetitive
t
AR
limited by
T
jmax
Gate source voltage
I
AR
V
GS
±20
±
30
±20
±
30
V
Gate source voltage AC (f >1Hz)
Power dissipation,
T
C
= 25°C
V
GS
P
tot
125
33
W
Operating and storage temperature
Reverse diode dv/dt
7)
T
j ,
T
stg
dv/dt
-55...+150
15
°C
V/ns
Rev.
3.1
Page 1
2009-11-30