IRFS4115-7PPBF

Part No.:
IRFS4115-7PPBF
Download:
Download
Description:
HEXFET Power MOSFET
File Size:
307 K
Page:
9 Pages
Logo:
Maker:
IRF [ INTERNATIONAL RECTIFIER ]
PCB Prototype

July 16, 2018:

IRLU2905

ISL54223IRUZ-T

ISL6264CRZ-T

J175

J378B

JS28F128P30TF75A

JTN1ASTMPFDC5V

JTN1STMPDC9V

K-229064-10-1A

L2-R82

L6935TR

LAN83C180

PCB Datasheet:1PCB Datasheet:1
PD -97147
IRFS4115-7PPbF
HEXFET
®
Power MOSFET
Applications
l
High Efficiency Synchronous Rectification in SMPS
l
Uninterruptible Power Supply
l
High Speed Power Switching
l
Hard Switched and High Frequency Circuits
G
Benefits
l
Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l
Fully Characterized Capacitance and Avalanche
SOA
l
Enhanced body diode dV/dt and dI/dt Capability
l
Lead-Free
D
V
DSS
R
DS(on)
typ.
150V
10.0m
:
max. 11.8m
:
105A
S
I
D
D
S
G
S
S
S
S
D
2
Pak 7 Pin
G
D
S
Gate
Drain
Max.
105
74
420
380
2.5
± 20
32
-55 to + 175
300
10lbxin (1.1Nxm)
230
See Fig. 14, 15, 22a, 22b,
Source
Units
A
W
W/°C
V
V/ns
°C
Absolute Maximum Ratings
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
dv/dt
T
J
T
STG
Parameter
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
c
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery
e
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
E
AS (Thermally limited)
I
AR
E
AR
Single Pulse Avalanche Energy
d
Avalanche Current
c
Repetitive Avalanche Energy
f
mJ
A
mJ
Thermal Resistance
Symbol
R
θJC
R
θJA
Parameter
Junction-to-Case
jk
Junction-to-Ambient ( PCB Manufacturer Mount)
ij
Typ.
–––
–––
Max.
0.40
40
Units
°C/W
www.irf.com
1
11/7/08