ERJ-8GEYJ100V

Part No.:
ERJ-8GEYJ100V
Download:
Download
Description:
90W GaN WIDE-BAND POWER AMPLIFIER
File Size:
1914 K
Page:
14 Pages
Logo:
Maker:
RFMD [ RF MICRO DEVICES ]
PCB Prototype

July 16, 2018:

ESDALC6V1P

EVAL-418-B

EVAL-ADAU1442EBZ

EVQQ0C

FA10342_OSS-W

FAN5236_10

FAN7171

FAN8200DTF

FP144

FR1112H

FYSH-0335UXC-66-12V-WW8

G5LA1A4-E-CFVDC

PCB Datasheet:1PCB Datasheet:1
RF3933
90W GaN WIDE-BAND POWER AMPLIFIER
Package: Hermetic 2-Pin Flanged Ceramic
Features
Broadband Operation DC to
3.5GHz
Advanced GaN HEMT
Technology
Advanced Heat Sink
Technology
Small Signal Gain = 21dB at
0.9GHz
48V Operation Typical
Performance:
• Output Power 90W at P3dB
• Drain Efficiency 75% at P3dB
• -40°C to 85°C Operation
RF IN
VGQ
Pin 1 (CUT)
GND
BASE
RF OUT
VDQ
Pin 2
Functional Block Diagram
Product Description
The RF3933 is a 48V, 90W high power discrete amplifier designed for commercial
wireless infrastructure, cellular and WiMAX infrastructure, industrial/scien-
tific/medical and general purpose broadband amplifier applications. Using an
advanced high power density Gallium Nitride (GaN) semiconductor process, these
high-performance amplifiers achieve high efficiency and flat gain over a broad fre-
quency range in a single amplifier design. The RF3933 is an unmatched GaN tran-
sistor packaged in a hermetic, flanged ceramic package. This package provides
excellent thermal stability through the use of advanced heat sink and power dissi-
pation technologies. Ease of integration is accomplished through the incorporation
of simple, optimized matching networks external to the package that provide wide-
band gain and power performance in a single amplifier.
Applications
Commercial Wireless
Infrastructure
Cellular and WiMAX
Infrastructure
Civilian and Military Radar
General Purpose Broadband
Amplifiers
Public Mobile Radios
Industrial, Scientific and
Medical
Ordering Information
RF3933S2
RF3933SB
RF3933SQ
RF3933SR
RF3933TR7
RF3933PCK-411
2-piece sample bag
5-piece bag
25-piece bag
100 pieces on 7” short reel
750 pieces on 7” reel
Fully assembled evaluation board optimized for
2.14GHz; 48V
Optimum Technology Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
BiFET HBT
LDMOS
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2012, RF Micro Devices, Inc.
DS120306
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
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