2SC4132,2SC4132T100R

Part No.:
2SC4132,2SC4132T100R
Download:
Download
Description:
Power Transistor (120V, 1.5A)
File Size:
81 K
Page:
4 Pages
Logo:
Maker:
ROHM [ ROHM ]
PCB Prototype

July 16, 2018:

2W02

3030800042

3094

31-4237

31-5607

356006

39-03-6064

410-97-216-41-001

41662-0027

42375-0352

43045-0409

441500024

PCB Datasheet:1
2SC4132 / 2SD1857
Transistors
Power Transistor (120V, 1.5A)
2SC4132 / 2SD1857
Features
1) High breakdown voltage. (BV
CEO
= 120V)
2) Low collector output capacitance.
(Typ. 20pF at V
CB
= 10V)
3) High transition frequency. (f
T
= 80MHz)
4) Complements the 2SB1236.
External dimensions
(Unit : mm)
2SC4132
1.0
1.5
0.4
(1)
4.0
2.5
0.5
3.0
0.5
(3)
1.5
0.4
1.5
4.5
1.6
(2)
Absolute maximum ratings
(Ta = 25°C)
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
2SC4132
2SD1857
Tj
Tstg
P
C
Limits
120
120
5
2
3
0.5
2
1
Unit
V
V
V
A
A
ROHM : MPT3
EIAJ : SC-62
(1) Base(Gate)
(2) Collector(Drain)
(3) Emitter(Source)
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
2SD1857
1
0.65Max.
0.4
6.8
2.5
0.9
1.0
4.4
2
3
0.5
150
−55
to +150
°C
°C
(1) (2) (3)
2.54 2.54
1.05
0.45
1 Single pulse Pw = 10ms
2 When mounted on a 40
×
40
×
0.7mm ceramic board.
2
3 When mounted on 1.7mm thick PCB Prototyping having collector foll dimensions 1cm or more.
ROHM : ATV
Taping specifications
14.5
W
(1) Emitter
(2) Collector
(3) Base
Packaging specifications and h
FE
Type
2SC4132
MPT3
PQR
T100
1000
2SD1857
ATV
QR
TV2
2500
Package
h
FE
Marking
Code
Basic ordering unit (pieces)
CB
Denotes h
FE
Electrical characteristics
(Ta = 25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current
transfer ratio
Transition frequency
Output capacitance
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
Min.
120
120
5
82
Typ.
80
20
Max.
1
1
2
390
Unit
V
V
V
µA
µA
V
MHz
pF
I
C
= 50µA
I
C
= 1mA
I
E
= 50µA
V
CB
= 100V
V
EB
= 4V
I
C
/I
B
= 1A/0.1A
Conditions
V
CE
/I
C
= 5V/0.1A
V
CE
= 5V , I
E
=
−0.1A
, f = 30MHz
V
CB
= 10V , I
E
= 0A , f = 1MHz
Measured using pulse current.
Rev.A
1/3