SPF-2086T

Part No.:
SPF-2086T
Download:
Download
Description:
Low Noise pHEMT GaAs FET 0.1 - 12 GHz Operation
File Size:
583 K
Page:
5 Pages
Logo:
Maker:
SIRENZA [ SIRENZA MICRODEVICES ]
PCB Prototype

July 16, 2018:

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PCB Datasheet:1PCB Datasheet:1
Product Description
Sirenza Microdevices’ SPF-2086T is a high performance
0.25µm pHEMT Gallium Arsenide FET with Schottky barrier
gates. This 300µm device is ideally biased at 3V,20mA for lowest
noise performance and battery powered requirements. At
5V,40mA the device delivers excellent output TOI of 32 dBm.
It provides ideal performance as driver stages in many
commercial, industrial and military LNA applications.
SPF-2086T
Low Noise pHEMT GaAs FET
0.1 - 12 GHz Operation
35
30
Gain, Gmax (dB)
Typical Gain Performance
3v, 20mA
5v, 40mA
25
20
15
10
5
0
0
2
4
6
8
10
12
Gmax
Gain
Product Features
22 dB Gmax at 1.9 GHz
0.4 dB F
MIN
at 1.9 GHz
+32 dBm Output IP3
+20 dBm Output Power at 1dB Compression
Applications
LNA for Analog and Digital Wireless Systems
3G, Cellular, PCS
Fixed Wireless, Pager Systems
Driver Stage for low power applications
Test C ondition
[1] = 100% Tested
U nits
Min.
Typ.
Max.
Frequency (GHz)
Symbol
D evice C haracteristics, T = 25°C
V
DS
=3V, I
DQ
=20mA (unless otherw ise noted)
Gmax
Maxi mum Avai lable Gai n
Z
S
=Z
S
*, Z
L
=Z
L
*
Inserti on Gai n
Z
S
=Z
L
= 50 Ohms
Mi ni mum Noi se Fi gure
Z
S
OPT
, Z
L
=Z
LOPT
Output Thi rd Order Intercept Poi nt
Z
S
=Z
SOPT
, Z
L
=Z
LOPT
Output 1dB C ompressi on Poi nt
Z
S
=Z
SOPT
, Z
L
=Z
LOPT
Saturated D rai n C urrent
V
DS
= V
DSP
, V
GS
= 0V
Tranconductance:
V
DS
= V
DSP
, V
GS
= -0.25V
Pi nch-Off Voltage:
V
DS
= 2.0V, I
DS
= 150
µA
Gate-to-Source Breakdown Voltage
I
GS
= 0.3mA, drai n open
Gate-to-D rai n Breakdown Voltage
I
GD
= 0.3mA, V
GS
= -3.0V
Thermal Resi stance, juncti on-to-lead
f
f
f
f
=
=
=
=
0.9 GHz
1.9 GHz
4.0 GHz [1]
12.0 GHz [1]
[1]
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB m
dB m
dB m
dB m
mA
mS
-
-
16.8
8.4
16.0
-
-
-
-
-
-
-
-
30
-
-1.5
-
-
-
25.2
21.8
18.7
9.3
17.7
0.3
0.4
0.5
0.7
32
28
20
15
85
112
-1.0
-17
-17
110
-
-
-
-
19.4
-
-
-
-
-
-
-
-
140
-
-0.5
-8
-8
-
S
21
f = 1.9 GHz
f
f
f
f
=
=
=
=
1
2
4
6
GHz
GHz
GHz
GHz
F
MIN
OIP3
P 1dB
I
DSS
g
m
V
P
BV
GS
BV
GD
Rth
V
DS
=5.0V, I
DQ
=40mA
V
DS
=3.0V, I
DQ
=20mA
V
DS
=5.0V, I
DQ
=40mA
V
DS
=3.0V, I
DQ
=20mA
[1]
[1]
[1]
o
V
V
V
C /W
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions.
Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza
Microdevices product for use in life-support devices and/or systems.
Copyright 2003 Sirenza Microdevices, Inc. All worldwide rights reserved.
303 S. Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC
1
http://www.sirenza.com
EDS-101189 Rev E