SIHF9Z14L,SIHF9Z14S,SIHF9Z14S-E3,SIHF9Z14STL,SIHF9Z14STL-E3

Part No.:
SIHF9Z14L,SIHF9Z14S,SIHF9Z14S-E3,SIHF9Z14STL,SIHF9Z14STL-E3
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Description:
Power MOSFET
File Size:
2454 K
Page:
8 Pages
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Maker:
VISHAY [ VISHAY TELEFUNKEN ]
PCB Prototype

July 16, 2018:

SIHFZ44STR-E3

SLD04205

SLF6025-100M1R0

SM74503

SMF45A-M

SN65C1168PWRG4

SN65HVD55DRG4

SN65LV1023ADB

SN74ACT16373Q-EP

SN74AUP1G08YZPR

SN74AVCH32T245

SN74CB3T3245PWRE4

PCB Datasheet:1PCB Datasheet:1
IRF9Z14S, SiHF9Z14S, IRF9Z14L, SiHF9Z14L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(Ω)
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= - 10 V
12
3.8
5.1
Single
- 60
0.50
FEATURES
• Advanced Process Technology
• Surface Mount (IRF9Z14S/SiHF9Z14S)
• Low-ProfileThrough-Hole (IRF9Z14L/SiHF9Z14L)
• 175 °C Operating Temperature
Fast Switching
P-Channel
Fully Avalanche Rated
Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
DESCRIPTION
I
2
PAK (TO-262)
D
2
PAK (TO-263)
S
G
G
D
S
D
P-Channel MOSFET
Third generation Power MOSFETs from Vishay utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
Power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a
wide variety of applications.
The D
2
PAK is a surface mount power package capable of
accommodating die size up to HEX-4. It provides the highest
power capability and the lowest possible on-resistance in
any existing surface mount package. The D
2
PAK is suitable
for high current applications because of is low internal
connection resistance and can dissipate up to 2.0 W in a
typical surface mount application.
The through-hole version (IRF9Z14L/SiHF9Z14L) is
available for low-profile applications.
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
Note
a. See device orientation.
D
2
PAK (TO-263)
IRF9Z14SPbF
SiHF9Z14S-E3
IRF9Z14S
SiHF9Z14S
D
2
PAK (TO-263)
IRF9Z14STRLPbF
a
SiHF9Z14STL-E3
a
IRF9Z14STRL
a
SiHF9Z14STL
a
I
2
PAK (TO-262)
IRF9Z14LPbF
SiHF9Z14L-E3
-
-
ABSOLUTE MAXIMUM RATINGS
T
C
= 25 °C, unless otherwise noted
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
e
Pulsed Drain
Linear Derating Factor
Single Pulse Avalanche Energy
b, e
Avalanche Current
a
Repetiitive Avalanche Energy
a
Maximum Power Dissipation
T
C
= 25 °C
T
A
= 25 °C
Current
a, e
V
GS
at - 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
E
AS
I
AR
E
AR
P
D
LIMIT
- 60
± 20
- 6.7
- 4.7
- 27
0.29
140
- 6.7
4.3
3.7
43
UNIT
V
A
W/°C
mJ
A
mJ
W
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91089
S-Pending-Rev. A, 02-Jun-08
WORK-IN-PROGRESS
www.vishay.com
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