AWT6302R,AWT6302RM9Q7

Part No.:
AWT6302R,AWT6302RM9Q7
Download:
Download
Description:
PCS/CDMA 3.4V/28dBm Linear Power Amplifier Module
File Size:
425 K
Page:
10 Pages
Logo:
Maker:
ANADIGICS [ ANADIGICS, INC ]
PCB Prototype

July 19, 2018:

B19AH

B1SHW

B25HV-GA

B28HB-GA

B39700-B5018-Z510

B43521C9827M007

BA3170

BCR08PNQ62702C2486

BD5259

BD8961NV_10

BF421-AP

BF909WR

PCB Datasheet:1
PCS/CDMA 3.4V/28dBm
Linear Power Amplifier Module
FEATURES
InGaP HBT Technology
High Efficiency:
39%, V
MODE
= 0 V
40%, V
MODE
= +2.85 V (no mode switching)
Low Quiescent Current: 50 mA
Low Leakage Current in Shutdown Mode: <1
µA
V
REF
= +2.85 V (+2.75 V min over temp)
Optimized for a 50
System
Low Profile Miniature Surface Mount Package:
1.1 mm
CDMA 1XRTT, 1xEV-DO Compliant
Pinout Enables Easy Phone Board Migration
From 4 mm x 4 mm Package
RoHS-Compliant Package, 250
o
C MSL-3
AWT6302R
Data Sheet - Rev 2.1
M9 Package
8 Pin 3 mm x 3 mm x 1.1 mm
Surface Mount Module
APPLICATIONS
CDMA/EVDO PCS-band Wireless Handsets and
Data Devices
PRODUCT DESCRIPTION
The AWT6302R meets the increasing demands for
higher efficiency and linearity in CDMA 1X handsets,
while reducing PCB Prototyping area by 44%. The package pinout
was chosen to enable handset manufacturers to
switch from a 4 mm x 4 mm PA module with very few
layout changes to the phone board. The PA module is
optimized for V
REF
= +2.85 V. The device is manufactured
on an advanced InGaP HBT MMIC technology offering
state-of-the-art reliability, temperature stability, and
ruggedness. Selectable bias modes that optimize
efficiency for different output power levels, and a
shutdown mode with low leakage current, increase
handset talk and standby time. The self-contained
3 mm x 3 mm x 1.1 mm surface mount package
incorporates matching networks optimized for output
power, efficiency, and linearity in a 50
system.
GND
at
slug
(pad)
V
CC
1
8
V
CC
RF
IN
2
7
RF
OUT
V
MODE
3
Bias Control
6
GND
V
REF
4
5
GND
Figure 1: Block Diagram
09/2008