AOD417,AOD417_08

Part No.:
AOD417,AOD417_08
Download:
Download
Description:
P-Channel Enhancement Mode Field Effect Transistor
File Size:
144 K
Page:
6 Pages
Logo:
Maker:
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
PCB Prototype

July 19, 2018:

AOL1448

AP5004SG-U

APTGF75DH120TG

ASC-5S15D

ASMT-RA45-AP932

ASX602

ATM0350D21

ATS045045021-SF-15T

AW2204

AWT6302RM9Q7

B19AH

B1SHW

PCB Datasheet:1PCB Datasheet:1
AOD417
P-Channel Enhancement Mode Field Effect Transistor
General Description
The AOD417 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and low
gate resistance. With the excellent thermal resistance
of the DPAK package, this device is well suited for
high current load applications.
-RoHS Compliant
-Halogen Free*
Features
V
DS
(V) = -30V
(V
GS
= -10V)
I
D
= -25A
R
DS(ON)
< 34mΩ (V
GS
= -10V)
R
DS(ON)
< 55mΩ (V
GS
= -4.5V)
100% UIS Tested!
100% Rg Tested!
Top View
D
TO-252
D-PAK
Bottom View
D
G
S
G
S
G
S
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
B,G
Current
Pulsed Drain Current
Avalanche Current
C
C
Maximum
-30
±20
-25
-20
-60
-14
30
50
25
2.5
1.6
-55 to 175
Units
V
V
A
A
mJ
W
W
°
C
V
GS
T
A
=25°
C
C
G
T
A
=100°
C
I
D
I
DM
I
AR
E
AR
P
D
P
DSM
T
J
, T
STG
Repetitive avalanche energy L=0.3mH
T
C
=25°
C
Power Dissipation
Power Dissipation
B
T
C
=100°
C
T
A
=25°
C
T
A
=70°
C
A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Case
D
Symbol
t
10s
Steady-State
Steady-State
R
θJA
R
θJC
Typ
16.7
40
2.5
Max
25
50
3
Units
°
C/W
°
C/W
°
C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com