FDMS3664S

Part No.:
FDMS3664S
Download:
Download
Description:
PowerTrench® Power Stage Asymmetric Dual N-Channel MOSFET
File Size:
584 K
Page:
15 Pages
Logo:
Maker:
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
PCB Prototype

July 19, 2018:

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PCB Datasheet:1PCB Datasheet:1PCB Datasheet:1
FDMS3664S PowerTrench
®
Power Stage
FDMS3664S
PowerTrench
®
Power Stage
Asymmetric Dual N-Channel MOSFET
Features
Q1: N-Channel
Max r
DS(on)
= 8 mΩ at V
GS
= 10 V, I
D
= 13 A
Max r
DS(on)
= 11 mΩ at V
GS
= 4.5 V, I
D
= 11 A
Q2: N-Channel
Max r
DS(on)
= 2.6 mΩ at V
GS
= 10 V, I
D
= 25 A
Max r
DS(on)
= 3.2 mΩ at V
GS
= 4.5 V, I
D
= 22 A
Low inductance packaging shortens rise/fall times, resulting in
lower switching losses
MOSFET integration enables optimum layout for lower circuit
inductance and reduced switch node ringing
RoHS Compliant
December
2011
General Description
This device includes two specialized N-Channel MOSFETs in a
dual PQFN package. The switch node has been internally
connected to enable easy placement and routing of synchronous
buck converters. The control MOSFET (Q1) and synchronous
SyncFET (Q2) have been designed to provide optimal power
efficiency.
Applications
Computing
Communications
General Purpose Point of Load
Notebook VCORE
G1
D1
D1
D1
D1
PHASE
(S1/D2)
G2
S2
S2
Top
Power 56
S2
S2
S2
5
6
7
8
Q2
4
D1
3
D1
2
D1
Q1
PHASE
S2
Bottom
G2
1
G1
MOSFET Maximum Ratings
T
A
= 25 °C unless otherwise noted
Symbol
V
DS
V
GS
Drain to Source Voltage
Gate to Source Voltage
Drain Current
I
D
-Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
E
AS
P
D
T
J
, T
STG
Single Pulse Avalanche Energy
Power Dissipation for Single Operation
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
T
A
= 25 °C
T
A
= 25 °C
(Note 3)
T
C
= 25 °C
T
C
= 25 °C
T
A
= 25 °C
Parameter
Q1
30
±20
30
60
13
1a
Q2
30
±12
60
118
25
1b
100
48
5
2.5
1b
Units
V
V
A
40
33
2.2
1
4
1a
mJ
W
°C
1c
1
1d
-55 to +150
Thermal Characteristics
R
θJA
R
θJA
R
θJC
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
57
1a
125
1c
2.9
50
1b
120
1d
2.3
°C/W
Package Marking and Ordering Information
Device Marking
22CF
10OD
Device
FDMS3664S
Package
Power 56
1
Reel Size
13 ”
Tape Width
12 mm
Quantity
3000 units
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©2011 Fairchild Semiconductor Corporation
FDMS3664S Rev.C1