FDT459N

Part No.:
FDT459N
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Download
Description:
N-Channel Enhancement Mode Field Effect Transistor
File Size:
92 K
Page:
4 Pages
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Maker:
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
PCB Prototype

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PCB Datasheet:1PCB Datasheet:1
March 1998
FDT459N
N-Channel Enhancement Mode Field Effect Transistor
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high
cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state resistance,
provide superior switching performance. These products are
well suited to low voltage, low current applications such as
notebook computer power management, battery powered
circuits, and DC motor control.
Features
6.5 A, 30 V. R
DS(ON)
= 0.035
@ V
GS
= 10 V
R
DS(ON)
= 0.055
@ V
GS
= 4.5 V.
High density cell design for extremely low R
DS(ON)
.
High power and current handling capability in a widely used
surface mount package.
SuperSOT -3
TM
SuperSOT -6
TM
SuperSOT
TM
-8
SO-8
SOT-223
SOIC-16
D
D
G
D
S
G
S
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Parameter
Drain-Source Voltage
T
A
= 25
o
C unless otherwise noted
FDT459N
30
±20
(Note 1a)
Units
V
V
A
Gate-Source Voltage - Continuous
Maximum Drain Current - Continuous
- Pulsed
Maximum Power Dissipation
(Note 1a)
(Note 1b)
(Note 1c)
6.5
20
3
1.3
1.1
-55 to 150
W
T
J
,T
STG
R
θ
JA
R
θ
JC
Operating and Storage Temperature Range
°C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
42
12
°C/W
°C/W
* Order option J23Z for cropped center drain lead.
© 1998 Fairchild Semiconductor Corporation
FDT459NRev.C