FJT44,FJT44_06

Part No.:
FJT44,FJT44_06
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Description:
NPN Epitaxial Silicon Transistor
File Size:
156 K
Page:
5 Pages
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Maker:
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
PCB Prototype

July 19, 2018:

FMAB-72

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FSB50450US

FSBB20CH60CL

FYLS-1204UBC

G12AP-RO

G6B-2274CUS24VDC

GBP302

GBU4M

GHPC2V530PMT003L

GP2W0118YPS

GRM1.1181.023

PCB Datasheet:1
FJT44 NPN Epitaxial Silicon Transistor
September 2006
FJT44
NPN Epitaxial Silicon Transistor
tm
High Voltage Transistor
3
2
1
SOT-223
1. Base 2. Collector 3. Emitter
Absolute Maximum Ratings*
T =25°C unless otherwise noted
a
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
o
C)
Value
500
400
6
300
Units
V
V
V
mA
W
°C
°C
(Ta = 25
2
150
- 55 ~ +150
Junction Temperature
Storage Temperature Range
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics*
T =25°C unless otherwise noted
a
Symbol
R
θJA
Parameter
Thermal Resistance, Junction to Ambient
2
Value
62.5
Units
°C/W
* Device mounted on FR-4 PCB Prototype 36 mm X 18 mm X 1.5 mm. mounting pad for the collector lead min. 6 cm
Electrical Characteristics*
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
CES
I
EBO
h
FE
T
a
= 25°C unless otherwise noted
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Collector-Emitter Cutoff Current
Emitter-Base Cutoff Current
DC Current Gain
Test Conditions
I
C
= 100uA, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 100µA, I
C
= 0
V
CB
= 400V I
E
= 0
V
CE
= 400V, V
BE
= 0
V
CE
= 4V, I
C
= 0
V
CE
=10V, I
C
=1mA
V
CE
=10V, I
C
=10mA
V
CE
=10V, I
C
=50mA
V
CE
=10V, I
C
=100mA
I
C
= 1mA, I
B
= 0.1mA
I
C
= 10mA, I
B
= 1mA
I
C
= 50mA, I
B
= 5mA
I
C
= 10mA, I
B
= 1mA
V
CB
= 20V, I
E
= 0, f = 1MHz
Min.
500
400
6
Typ.
Max.
Units
V
V
V
100
500
100
40
50
45
40
nA
nA
nA
200
V
CE(sat)
Collector-Emitter Saturation Voltage
0.4
0.5
0.75
0.75
7
V
V
V
V
pF
V
BE(sat)
C
obo
Base-Emitter Saturation Voltage
Output Capacitance
* Pulse Test: Pulse Width
300µs, Duty Cycle
2.0%
©2006 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FJT44 Rev. B