FSB50450US

Part No.:
FSB50450US
Download:
Download
Description:
Smart Power Module (SPM®)
File Size:
318 K
Page:
8 Pages
Logo:
Maker:
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
PCB Prototype

July 19, 2018:

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GRM21BR71E155KA88L

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PCB Datasheet:1PCB Datasheet:1
FSB50450US Smart Power Module (SPM®)
February 2009
FSB50450US
Smart Power Module (SPM
®
)
Features
• 500V R
DS(on)
=2.4Ω(max) 3-phase FRFET inverter including
high voltage integrated circuit (HVIC)
• 3 divided negative dc-link terminals for inverter current sens-
ing applications
• HVIC for gate driving and undervoltage protection
• 3/5V CMOS/TTL compatible, active-high interface
• Optimized for low electromagnetic interference
• Isolation voltage rating of 1500Vrms for 1min.
• Surface mounted device package
• Moisture Sensitive Level (MSL) 3
General Description
FSB50450US is a tiny smart power module (SPM
®
) based on
FRFET technology as a compact inverter solution for small
power motor drive applications such as fan motors and water
suppliers. It is composed of 6 fast-recovery MOSFET (FRFET),
and 3 half-bridge HVICs for FRFET gate driving. FSB50450US
provides low electromagnetic interference (EMI) characteristics
with optimized switching speed. Moreover, since it employs
FRFET as a power switch, it has much better ruggedness and
larger safe operation area (SOA) than that of an IGBT-based
power module or one-chip solution. The package is optimized
for the thermal performance and compactness for the use in the
built-in motor application and any other application where the
assembly space is concerned. FSB50450US is the most
solution for the compact inverter providing the energy efficiency,
compactness, and low electromagnetic interference.
Absolute Maximum Ratings
Symbol
V
PN
I
D25
I
D80
I
DP
P
D
V
CC
V
BS
V
IN
T
J
T
STG
R
θJC
V
ISO
Parameter
DC Link Input Voltage,
Drain-source Voltage of each FRFET
Each FRFET Drain Current, Continuous
Each FRFET Drain Current, Continuous
Each FRFET Drain Current, Peak
Maximum Power Dissipation
Control Supply Voltage
High-side Bias Voltage
Input Signal Voltage
Operating Junction Temperature
Storage Temperature
Junction to Case Thermal Resistance
Isolation Voltage
T
C
= 25°C
T
C
= 80°C
Conditions
Rating
500
1.5
1.1
3.8
14
20
20
-0.3 ~ VCC+0.3
-40 ~ 150
-50 ~ 150
Units
V
A
A
A
W
V
V
V
°C
°C
°C/W
V
rms
T
C
= 25°C, PW < 100μs
T
C
= 25°C, Each FRFET
Applied between V
CC
and COM
Applied between V
B(U)
-U, V
B(V)
-V, V
B(W)
-W
Applied between IN and COM
Each FRFET under inverter operating con-
dition (Note 1)
60Hz, Sinusoidal, 1 minute, Connection
pins to heatsink
8.9
1500
©2009 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FSB50450US Rev. A