CDR33BX104AKYS

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CDR33BX104AKYS
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Description:
RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET
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1443 K
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19 Pages
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Maker:
FREESCALE [ FREESCALE SEMICONDUCTOR, INC ]
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PCB Datasheet:1PCB Datasheet:1PCB Datasheet:1
Freescale Semiconductor
Technical Data
Document Number: MRF6VP2600H
Rev. 5.1, 7/2010
RF Power Field Effect Transistor
N--Channel Enhancement--Mode Lateral MOSFET
Designed primarily for wideband applications with frequencies up to 500 MHz.
Device is unmatched and is suitable for use in broadcast applications.
Typical DVB--T OFDM Performance: V
DD
= 50 Volts, I
DQ
= 2600 mA,
P
out
= 125 Watts Avg., f = 225 MHz, Channel Bandwidth = 7.61 MHz,
Input Signal PAR = 9.3 dB @ 0.01% Probability on CCDF.
Power Gain — 25 dB
Drain Efficiency — 28.5%
ACPR @ 4 MHz Offset — --61 dBc @ 4 kHz Bandwidth
Typical Pulsed Performance: V
DD
= 50 Volts, I
DQ
= 2600 mA,
P
out
= 600 Watts Peak, f = 225 MHz, Pulse Width = 100
μsec,
Duty
Cycle = 20%
Power Gain — 25.3 dB
Drain Efficiency — 59%
Capable of Handling 10:1 VSWR, @ 50 Vdc, 225 MHz, 600 Watts Peak
Power, Pulse Width = 100
μsec,
Duty Cycle = 20%
Features
Characterized with Series Equivalent Large--Signal Impedance Parameters
CW Operation Capability with Adequate Cooling
Qualified Up to a Maximum of 50 V
DD
Operation
Integrated ESD Protection
Designed for Push--Pull Operation
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
RoHS Compliant
In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
MRF6VP2600HR6
2-
-500 MHz, 600 W, 50 V
LATERAL N-
-CHANNEL
BROADBAND
RF POWER MOSFET
CASE 375D-
-05, STYLE 1
NI-
-1230
PART IS PUSH-
-PULL
RF
inA
/V
GSA
3
1 RF
outA
/V
DSA
RF
inB
/V
GSB
4
2 RF
outB
/V
DSB
(Top View)
Figure 1. Pin Connections
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
Symbol
V
DSS
V
GS
T
stg
T
C
T
J
Value
--0.5, +110
--6.0, +10
-- 65 to +150
150
225
Unit
Vdc
Vdc
°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 99°C, 125 W CW, 225 MHz, 50 Vdc, I
DQ
= 2600 mA
Case Temperature 64°C, 610 W CW, 352.2 MHz, 50 Vdc, I
DQ
= 150 mA
Case Temperature 81°C, 610 W CW, 88--108 MHz, 50 Vdc, I
DQ
= 150 mA
Symbol
R
θJC
Value
(2,3)
0.20
0.14
0.16
Unit
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
©
Freescale Semiconductor, Inc., 2008--2010. All rights reserved.
MRF6VP2600HR6
1
RF Device Data
Freescale Semiconductor