HMC616LP3,HMC616LP3_10,HMC616LP3E

Part No.:
HMC616LP3,HMC616LP3_10,HMC616LP3E
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Download
Description:
GaAs SMT PHEMT LOW NOISE AMPLIFIER, 175 - 660 MHz
File Size:
764 K
Page:
10 Pages
Logo:
Maker:
HITTITE [ HITTITE MICROWAVE CORPORATION ]
PCB Prototype

July 19, 2018:

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PCB Datasheet:1PCB Datasheet:1PCB Datasheet:1PCB Datasheet:1PCB Datasheet:1
HMC616LP3 / 616LP3E
v02.0610
GaAs SMT PHEMT LOW NOISE
AMPLIFIER, 175 - 660 MHz
Features
low Noise figure: 0.5 dB
High Gain: 24 dB
High output ip3: +37 dBm
single supply: +3V to +5V
50 ohm matched input/output
16 lead 3x3mm QfN package: 9 mm
2
7
Amplifiers - low Noise - smT
Typical Applications
The HmC616lp3(e) is ideal for:
• Cellular/3G and lTe/wimAX/4G
• BTs & infrastructure
• repeaters and femtocells
• public safety radio
• DAB receivers
Functional Diagram
General Description
The HmC616lp3(e) is a GaAs pHemT mmiC
low Noise Amplifier that is ideal for Cellular/3G and
lTe/wimAX/4G basestation front-end receivers
operating between 175 and 660 mHz. The amplifier
has been optimized to provide 0.5 dB noise figure,
24 dB gain and +37 dBm output ip3 from a single
supply of +5V. input and output return losses are
excellent with minimal external matching and bias
decoupling components. The HmC616lp3(e) shares
the same package and pinout with the HmC617-
lp3(e) and HmC618lp3(e) lNAs. The HmC616lp3(e)
can be biased with +3V to +5V and features an
externally adjustable supply current which allows
the designer to tailor the linearity performance of the
lNA for each application. The HmC616lp3(e) offers
improved noise figure versus the previously released
HmC356lp3(e).
Electrical Specifications,
T
A
= +25° C, Rbias = 3.92k Ohms*
parameter
frequency range
Gain
Gain Variation over Temperature
Noise figure
input return loss
output return loss
output power for 1 dB
Compression (p1dB)
saturated output power (psat)
output Third order intercept (ip3)
supply Current (idd)
8
8.5
0.5
10
9
11
13
20
30
45
10
11
0.8
20
Vdd = +3V
min.
Typ.
175 - 230
22.5
15
max.
min.
Typ.
230 - 660
20
0.002
0.5
16
10
15
15.5
30
30
45
11
12.5
0.8
0.5
12
9
15
17.5
32
90
115
14
15.5
0.8
21
max.
min.
Typ.
175 - 230
24
15
Vdd = +5V
max.
min.
Typ.
230 - 660
21
0.005
0.5
14
10
19
19.5
37
90
115
0.8
max.
Units
mHz
dB
dB/ °C
dB
dB
dB
dBm
dBm
dBm
mA
* rbias resistor sets current, see application circuit herein
7-1
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com