IPG20N06S3L-35

Part No.:
IPG20N06S3L-35
Download:
Download
Description:
OptiMOS-T Power-Transistor
File Size:
164 K
Page:
9 Pages
Logo:
Maker:
INFINEON [ INFINEON TECHNOLOGIES AG ]
PCB Prototype

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PCB Datasheet:1PCB Datasheet:1PCB Datasheet:1
IPG20N06S3L-35
OptiMOS
®
-T
Power-Transistor
Product Summary
V
DS
R
DS(on),max5)
I
D
55
35
20
V
mΩ
A
Features
• Dual N-channel Logic Level - Enhancement mode
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
PG-TDSON-8-4
Type
IPG20N06S3L-35
Package
PG-TDSON-8-4
Marking
3N06L35
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
one channel active
Symbol
I
D
Conditions
T
C
=25 °C,
V
GS
=10 V
1)
T
C
=100 °C,
V
GS
=10 V
2)
Pulsed drain current
2)
one channel active
Avalanche energy, single pulse
2, 5)
Avalanche current, single pulse
5)
Gate source voltage
4)
Power dissipation
one channel active
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
I
D,pulse
E
AS
I
AS
V
GS
P
tot
T
j
,
T
stg
-
-
I
D
=10A
-
-
T
C
=25 °C
-
-
Value
Unit
A
20
15.5
80
55
20
±16
30
-55 ... +175
55/175/56
mJ
A
V
W
°C
Rev. 1.0
page 1
2008-09-23