IRFBF20S

Part No.:
IRFBF20S
Download:
Download
Description:
Power MOSFET(Vdss=900V, Rds(on)=8.0ohm, Id=1.7A)
File Size:
313 K
Page:
10 Pages
Logo:
Maker:
IRF [ INTERNATIONAL RECTIFIER ]
PCB Prototype

July 19, 2018:

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PCB Datasheet:1PCB Datasheet:1
PD - 9.1665
PRELIMINARY
l
l
l
l
l
l
l
IRFBF20S/L
HEXFET
®
Power MOSFET
D
Surface Mount (IRFBF20S)
Low-profile through-hole (IRFBF20L)
Available in Tape & Reel (IRFBF20S)
Dynamic dv/dt Rating
150°C Operating Temperature
Fast Switching
Fully Avalanche Rated
V
DSS
= 900V
R
DS(on)
= 8.0Ω
G
I
D
= 1.7A
S
Description
Third generation HEXFETs from international Rectifier provide the designer with the
best combination of fast switching, ruggedized device design, low on-resistance and
cost-effectiveness.
The D
2
Pak is a surface mount power package capable ofthe accommodatingdie sizes
up to HEX-4. It provides the highest power capability and the lowest possible on-
resistance in any existing surface mount package. The D
2
Pak is suitable for high
current applications because of its low internal connection resistance and can
dissipate up to 2.0W in a typical surface mount application. The through-hole version
(IRFBF20L) is available for low-profile applications.
D 2 Pak
T O -2 6 2
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V…
Continuous Drain Current, V
GS
@ 10V…
Pulsed Drain Current
…
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚…
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
ƒ…
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
1.7
1.1
6.8
3.1
54
0.43
± 20
180
1.7
5.4
1.5
-55 to + 150
300 (1.6mm from case )
Units
A
W
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Parameter
R
θJC
R
θJA
Junction-to-Case
Junction-to-Ambient ( PCB Online Mounted,steady-state)**
Typ.
–––
–––
Max.
2.3
40
Units
°C/W
7/10/97