IRFR5505

Part No.:
IRFR5505
Download:
Download
Description:
Power MOSFET(Vdss=-55V, Rds(on)=0.11ohm, Id=-18A)
File Size:
109 K
Page:
10 Pages
Logo:
Maker:
IRF [ INTERNATIONAL RECTIFIER ]
PCB Prototype

July 19, 2018:

IRFSL33N15DPBF

IRFU3410PBF

IRFU4105

IRLU024

IRPT1057A

IRPT2051

ISL1208IB8-TK

ISL76683AROZ-T7

ISL8088_10

ISP1521BE

IZ8005

JMR042ABJ010BC-T

PCB Datasheet:1PCB Datasheet:1
PD - 9.1610B
IRFR/U5505
HEXFET
®
Power MOSFET
l
l
l
l
l
l
l
Ultra Low On-Resistance
P-Channel
Surface Mount (IRFR5505)
Straight Lead (IRFU5505)
Advanced Process Technology
Fast Switching
Fully Avalanche Rated
D
V
DSS
= -55V
R
DS(on)
= 0.11Ω
G
S
I
D
= -18A
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The D-Pak is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU series) is for through-hole mounting
applications. Power dissipation levels up to 1.5 watts are
possible in typical surface mount applications.
D -P a k
T O -2 52 A A
I-P a k
TO -2 5 1 A A
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ -10V
Continuous Drain Current, V
GS
@ -10V
Pulsed Drain Current

Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
-18
-11
-64
57
0.45
± 20
150
-9.6
5.7
-5.0
-55 to + 150
300 (1.6mm from case )
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Parameter
R
θJC
R
θJA
R
θJA
Junction-to-Case
Junction-to-Ambient ( Prototype PCB mount)**
Junction-to-Ambient
Typ.
–––
–––
–––
Max.
2.2
50
110
Units
°C/W
8/25/97