SIHFU9110,SIHFU9110-E3

Part No.:
SIHFU9110,SIHFU9110-E3
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Description:
Power MOSFET
File Size:
3898 K
Page:
7 Pages
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Maker:
KERSEMI [ Kersemi Electronic Co., Ltd. ]
PCB Prototype

July 19, 2018:

SK39B

SMAW250G-15G

SN54ABT16657_08

SN54HCT541_08

SN54LV245AW

SN7416N

SN74ABT827PW

SN74ACT374PWR

SN74AHCT273PWR

SN74AUC1G74_07

SN74HC42N

SN74LV244A

PCB Datasheet:1PCB Datasheet:1
IRFR9110, IRFU9110, SiHFR9110, SiHFU9110
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(Ω)
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
- 100
V
GS
= - 10 V
8.7
2.2
4.1
Single
S
FEATURES
Dynamic dV/dt Rating
Repetitive Avalanche Rated
Surface Mount (IRFR9110/SiHFR9110)
Straight Lead (IRFU9110/SiHFU9110)
Available in Tape and Reel
P-Channel
Fast Switching
Lead (Pb)-free Available
Available
1.2
RoHS*
COMPLIANT
DPAK
(TO-252)
IPAK
(TO-251)
G
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effictiveness.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU/SiHFU Series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surcace mount applications.
D
P-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
Note
a. See device orientation.
DPAK (TO-252)
IRFR9110PbF
SiHFR9110-E3
IRFR9110
SiHFR9110
DPAK (TO-252)
IRFR9110TRLPbF
a
SiHFR9110TL-E3
a
IRFR9110TRL
a
SiHFR9110TL
a
DPAK (TO-252)
IRFR9110TRPbF
a
SiHFR9110T-E3
a
IRFR9110TR
a
SiHFR9110T
a
IPAK (TO-251)
IRFU9110PbF
SiHFU9110-E3
IRFU9110
SiHFU9110
ABSOLUTE MAXIMUM RATINGS
T
C
= 25 °C, unless otherwise noted
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain
Linear Derating Factor
Linear Derating Factor ( PCB Quote Mount)
e
Single Pulse Avalanche Energy
b
Repetitive Avalanche Current
a
Repetitive Avalanche Energy
a
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)
e
Peak Diode Recovery dV/dt
c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Current
a
V
GS
at - 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
LIMIT
- 100
± 20
- 3.1
- 2.0
- 12
0.20
0.020
140
- 3.1
2.5
25
2.5
- 5.5
- 55 to + 150
260
d
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
E
AS
I
AR
E
AR
T
C
= 25 °C
T
A
= 25 °C
P
D
dV/dt
T
J
, T
stg
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= - 25 V, starting T
J
= 25 °C, L = 21 mH, R
G
= 25
Ω,
I
AS
= - 3.1 A (see fig. 12).
c. I
SD
- 4.0 A, dI/dt
75 A/µs, V
DD
V
DS
, T
J
150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
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