APTGF75DH120TG

Part No.:
APTGF75DH120TG
Download:
Download
Description:
Asymmetrical - Bridge NPT IGBT Power Module
File Size:
257 K
Page:
5 Pages
Logo:
Maker:
MICROSEMI [ MICROSEMI CORPORATION ]
PCB Prototype

July 19, 2018:

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PCB Datasheet:1
APTGF75DH120TG
Asymmetrical - Bridge
NPT IGBT Power Module
VBUS
VBUS SENSE
Q1
G1
CR3
V
CES
= 1200V
I
C
= 75A @ Tc = 80°C
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Features
Non Punch Through (NPT) Fast IGBT
®
- Low voltage drop
- Low tail current
- Switching frequency up to 50 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
- Symmetrical design
- Lead frames for power connections
Internal thermistor for temperature monitoring
High level of integration
Benefits
Outstanding performance at high frequency
operation
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB Prototype mounting
Easy paralleling due to positive TC of VCEsat
Low profile
RoHS compliant
Max ratings
1200
100
75
150
±20
500
150A @ 1200V
Unit
V
APTGF75DH120TG – Rev 1 July, 2006
E1
OUT1
O UT2
Q4
G4
CR2
E4
0/VBUS SENSE
NTC1
0/VBUS
NT C2
VBUS
SENSE
G4
E4
OUT2
VBUS
0/VBUS
OUT1
E1
G1
0/VBUS
SENSE
NTC2
NTC1
Absolute maximum ratings
Symbol
V
CES
I
C
I
CM
V
GE
P
D
RBSOA
Parameter
Collector - Emitter Breakdown Voltage
Continuous Collector Current
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
T
c
= 25°C
T
c
= 80°C
T
c
= 25°C
T
c
= 25°C
T
j
= 150°C
A
V
W
Reverse Bias Safe Operating Area
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
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