XD010-14S-D4F

Part No.:
XD010-14S-D4F
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Description:
925-960 MHz Class A/AB 15W Power Amplifier Module
File Size:
211 K
Page:
5 Pages
Logo:
Maker:
SIRENZA [ SIRENZA MICRODEVICES ]
PCB Prototype

July 19, 2018:

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PCB Datasheet:1PCB Datasheet:1PCB Datasheet:1
Product Description
Sirenza Microdevices’
XD010-14S-D4F
15W power module is a robust 2-
stage Class A/AB amplifier module for use in GSM and EDGE RF applica-
tions. This module is optimized to minimize the EVM at typical operating
levels. The power transistors are fabricated using Sirenza's latest, high
performance LDMOS process. This unit operates from a single voltage
supply and has internal temperature compensation of the bias voltage to
ensure stable performance over the full temperature range. It is a drop-in,
no-tune solution for medium power applications requiring high efficiency,
excellent linearity, and unit-to-unit repeatability. It is internally matched to
50 ohms.
XD010-14S-D4F
925-960 MHz Class A/AB
15W Power Amplifier Module
Functional Block Diagram
Stage 1
Stage 2
Bias
Network
Temperature
Compensation
4
Product Features
50
W
RF impedance
15W Output P
1dB
Single Supply Operation : Nominally 28V
High Gain: 32 dB at 942 MHz
High Efficiency: 31% at 942 MHz
Robust 8000V ESD (HBM), Class 3B
High Peak Power for Lower BER
Ultra-low EVM
1
2
3
Applications
RF in
V
D1
V
D2
Case Flange = Ground
RF out
Base Station PA driver
Repeater
GSM / EDGE
Key Specifications
Symbol
Frequency
P
1dB
Gain
Gain Flatness
IRL
Efficiency
Linearity
Delay
Phase Linearity
R
TH, j-l
R
TH, j-2
Parameter
Frequency of Operation
Output Power at 1dB Compression (single tone)
Gain at 12W Output Power (CW)
Peak-to-Peak Gain Variation
Input Return Loss 12W CW
Drain Efficiency at 12W CW
RMS EVM at 8W EDGE output
Peak EVM at 8W EDGE output
3 Order IMD at 12W PEP (Two Tone)
Signal Delay from Pin 1 to Pin 4
Deviation from Linear Phase (Peak-to-Peak)
Thermal Resistance Stage 1 (Junction-to-Case)
Thermal Resistance Stage 2 (Junction-to-Case)
rd
Unit
MHz
W
dB
dB
dB
%
%
%
dBc
nS
Deg
ºC/W
ºC/W
Min.
925
10
30
12
27
Typ.
15
32
0.4
18
31
2.5
6.7
-35
2.5
0.5
11
4
Max.
960
35
1.0
-30
Test Conditions Z
in
= Z
out
= 50Ω, V
DD
= 28.0V, I
DQ1
= 230 mA, I
DQ2
=158 mA, T
Flange
= 25ºC
1625-1675The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and
all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any thrid party. Sirenza Microdevices
does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2003 Sirenza Microdevices, Inc. All worldwide rights reserved.
303 S. Technology Court,
Broomfield, CO 80021
Phone: (800) SMI-MMIC
1
http://www.sirenza.com
EDS-102936 Rev E