IRF9Z34L,IRF9Z34LPBF,IRF9Z34S,IRF9Z34SPBF,IRF9Z34STRL,IRF9Z34STRLPBF,IRF9Z34STRR,IRF9Z34S

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IRF9Z34L,IRF9Z34LPBF,IRF9Z34S,IRF9Z34SPBF,IRF9Z34STRL,IRF9Z34STRLPBF,IRF9Z34STRR,IRF9Z34S
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Description:
Power MOSFET
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2460 K
Page:
8 Pages
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Maker:
VISHAY [ VISHAY TELEFUNKEN ]
PCB Prototype

July 19, 2018:

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PCB Datasheet:1PCB Datasheet:1
IRF9Z34S, SiHF9Z34S, IRF9Z34L, SiHF9Z34L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(Ω)
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= - 10 V
34
9.9
16
Single
- 60
0.14
FEATURES
• Advanced Process Technology
• Surface Mount (IRF9Z34S/SiHF9Z34S)
• 175 °C Operating Temperature
• Fast Switching
• P-Channel
• Fully Avalanche Rated
• Lead (Pb)-free Available
S
Available
• Low-Profile Through-Hole (IRSiHF9Z34L/SiHF9Z34L)
RoHS*
COMPLIANT
DESCRIPTION
I
2
PAK (TO-262)
D
2
PAK
(TO-263)
G
G
D
S
D
P-Channel MOSFET
Third generation Power MOSFETs from Vishay utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
Power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a
wide variety of applications.
The D
2
PAK is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D
2
PAK is suitable for high current applications because of its
low internal connection resistance and can dissipate up to
2.0 W in a typical surface mount application.
The through-hole version (IRSiHF9Z34L/SiHF9Z34L) is
available for low-profile applications.
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
Note
a. See device orientation.
D
2
PAK (TO-263)
IRF9Z34SPbF
SiHF9Z34S-E3
IRF9Z34S
SiHF9Z34S
D
2
PAK (TO-263)
IRF9Z34STRLPbF
a
SiHF9Z34STL-E3
a
IRF9Z34STRL
a
SiHF9Z34STL
a
D
2
PAK (TO-263)
IRF9Z34STRRPbF
a
SiHF9Z34STR-E3
a
IRF9Z34STRR
a
SiHF9Z34STR
a
I
2
PAK (TO-262)
IRF9Z34LPbF
SiHF9Z34L-E3
IRF9Z34L
SiHF9Z34L
ABSOLUTE MAXIMUM RATINGS
T
C
= 25 °C, unless otherwise noted
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
a, e
Linear Derating Factor
Single Pulse Avalanche
Avalanche Current
a
Repetiitive Avalanche Energy
a
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91093
S-Pending-Rev. A, 03-Jun-08
www.vishay.com
1
Energy
b, e
E
AS
I
AR
E
AR
V
GS
at - 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
LIMIT
- 60
± 20
- 18
- 13
- 72
0.59
370
- 18
8.8
W/°C
mJ
A
mJ
A
UNIT
V
WORK-IN-PROGRESS