IRFR220,IRFR220PBF,IRFR220TR,IRFR220TRL,IRFR220TRLPBF,IRFR220TRPBF,IRFR220TRR,IRFR220TRRP

Part No.:
IRFR220,IRFR220PBF,IRFR220TR,IRFR220TRL,IRFR220TRLPBF,IRFR220TRPBF,IRFR220TRR,IRFR220TRRP
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Description:
Power MOSFET
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1447 K
Page:
8 Pages
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Maker:
VISHAY [ VISHAY TELEFUNKEN ]
PCB Prototype

July 19, 2018:

IRFR5505

IRFSL33N15DPBF

IRFU3410PBF

IRFU4105

IRLU024

IRPT1057A

IRPT2051

ISL1208IB8-TK

ISL76683AROZ-T7

ISL8088_10

ISP1521BE

IZ8005

PCB Datasheet:1PCB Datasheet:1
IRFR220, IRFU220, SiHFR220, SiHFU220
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(Ω)
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= 10 V
14
3.0
7.9
Single
D
FEATURES
200
0.80
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Surface Mount (IRFR220/SiHFR220)
• Straight Lead (IRFU220/SiHFU220)
• Available in Tape and Reel
• Fast Switching
• Ease of Paralleling
• Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
DPAK
(TO-252)
IPAK
(TO-251)
G
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU/SiHFU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surcace mount applications.
S
N-Channel
MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
DPAK (TO-252)
IRFR220PbF
SiHFR220-E3
IRFR220
SiHFR220
DPAK (TO-252)
IRFR220TRLPbF
a
SiHFR220TL-E3
a
IRFR220TRL
a
SiHFR220TL
a
DPAK (TO-252)
IRFR220TRPbF
a
SiHFR220T-E3
a
IRFR220TR
a
SiHFR220T
a
DPAK (TO-252)
IRFR220TRRPbF
a
SiHFR220TR-E3
a
IRFR220TRR
a
SiHFR220TR
a
IPAK (TO-251)
IRFU220PbF
SiHFU220-E3
IRFU220
SiHFU220
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS
T
C
= 25 °C, unless otherwise noted
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
V
GS
at 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
LIMIT
200
± 20
4.8
3.0
19
0.33
0.020
230
4.8
4.2
42
2.5
5.0
- 55 to + 150
260
d
UNIT
V
A
Pulsed Drain Current
a
I
DM
Linear Derating Factor
Linear Derating Factor ( PCB Prototype Mount)
e
Single Pulse Avalanche Energy
b
E
AS
Repetitive Avalanche Current
a
I
AR
a
Repetitive Avalanche Energy
E
AR
Maximum Power Dissipation
T
C
= 25 °C
P
D
e
T
A
= 25 °C
Maximum Power Dissipation (PCB Mount)
Peak Diode Recovery dV/dt
c
dV/dt
Operating Junction and Storage Temperature Range
T
J
, T
stg
Soldering Recommendations (Peak Temperature)
for 10 s
Notes
b. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
c. V
DD
= 50 V, starting T
J
= 25 °C, L = 14 mH, R
G
= 25
Ω,
I
AS
= 4.8 A (see fig. 12).
d. I
SD
5.2 A, dI/dt
95 A/µs, V
DD
V
DS
, T
J
150 °C.
e. 1.6 mm from case.
f. When mounted on 1" square PCB (FR-4 or G-10 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91270
S-81359-Rev. A, 07-Jul-08
W/°C
mJ
A
mJ
W
V/ns
°C
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