IRLU024,IRLU024PBF

Part No.:
IRLU024,IRLU024PBF
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Download
Description:
Power MOSFET
File Size:
1204 K
Page:
10 Pages
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Maker:
VISHAY [ VISHAY TELEFUNKEN ]
PCB Prototype

July 19, 2018:

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IZ8005

JMR042ABJ010BC-T

JS0108PP4-S

JVR042ABJ010BC-F

K50P100M72SF1

KA3014

PCB Datasheet:1PCB Datasheet:1
IRLR024, IRLU024, SiHLR024, SiHLU024
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(Ω)
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= 5.0 V
18
4.5
12
Single
D
FEATURES
60
0.10
• Dynamic dV/dt Rating
• Surface Mount (IRLR024/SiHLR024)
• Straight Lead (IRLU024/SiHLU024)
• Available in Tape and Reel
• Logic-Level Gate Drive
• R
DS(on)
Specified at V
GS
= 4 V and 5 V
• Fast Switching
• Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
DPAK
(TO-252)
D
D
IPAK
(TO-251)
DESCRIPTION
G
G
S
G
D S
S
N-Channel
MOSFET
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRLU/SiHLU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface mount applications.
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
Note
a. See device orientation.
DPAK (TO-252)
IRLR024PbF
SiHLR024-E3
IRLR024
SiHLR024
DPAK (TO-252)
IRLR024TRPbF
a
SiHLR024T-E3
a
IRLR024TR
a
SiHLR024T
a
IPAK (TO-251)
IRLU024PbF
SiHLU024-E3
IRLU024
SiHLU024
ABSOLUTE MAXIMUM RATINGS
T
C
= 25 °C, unless otherwise noted
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
a
Linear Derating Factor
Linear Derating Factor ( Cheap PCB
Maximum Power Dissipation
Maximum Power Dissipation (PCB
Peak Diode Recovery dV/dt
c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= 25 V, starting T
J
= 25 °C, L = 541 µH, R
G
= 25
Ω,
I
AS
= 14 A (see fig. 12).
c. I
SD
17 A, dI/dt
140 A/µs, V
DD
V
DS
, T
J
150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91322
S-82993-Rev. B, 19-Jan-09
www.vishay.com
1
Mount)
e
Mount)
e
E
AS
T
C
= 25 °C
T
A
= 25 °C
P
D
dV/dt
T
J
, T
stg
Single Pulse Avalanche Energy
b
V
GS
at 5.0 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
LIMIT
60
± 10
14
9.2
56
0.33
0.020
91
42
2.5
4.5
- 55 to + 150
260
d
W/°C
mJ
W
V/ns
°C
A
UNIT
V