SIHB12N50C-E3

Part No.:
SIHB12N50C-E3
Download:
Download
Description:
100 % Avalanche Tested Compliant to RoHS Directive 2002/95/EC
File Size:
153 K
Page:
8 Pages
Logo:
Maker:
VISHAY [ VISHAY TELEFUNKEN ]
PCB Prototype

July 19, 2018:

SIHF840LCST

SIHFU9110-E3

SK39B

SMAW250G-15G

SN54ABT16657_08

SN54HCT541_08

SN54LV245AW

SN7416N

SN74ABT827PW

SN74ACT374PWR

SN74AHCT273PWR

SN74AUC1G74_07

PCB Datasheet:1PCB Datasheet:1
SiHP12N50C, SiHB12N50C, SiHF12N50C
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V) at T
J
max.
R
DS(on)
(Ω)
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
TO-220AB
TO-220 FULLPAK
FEATURES
560 V
V
GS
= 10 V
48
12
15
Single
D
• Low Figure-of-Merit R
on
x Q
g
0.555
• 100 % Avalanche Tested
• Gate Charge Improved
• T
rr
/Q
rr
Improved
• Compliant to RoHS Directive 2002/95/EC
G
D
S
G
D
S
D
2
PAK (TO-263)
G
S
G
D
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
TO-220AB
SiHP12N50C-E3
D
2
PAK (TO-263)
SiHB12N50C-E3
TO-220 FULLPAK
SiHF12N50C-E3
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
LIMIT
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
a
Pulsed Drain Current
c
Linear Derating Factor
Single Pulse Avalanche Energy
b
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
d
for 10 s
E
AS
P
D
T
J
, T
stg
208
- 55 to + 150
300
V
GS
at 10 V
T
C
= 25 °C
T
C
= 100 °C
TO220-AB
SYMBOL D
2
PAK (TO-263)
V
DS
V
GS
I
D
I
DM
1.67
180
36
500
± 30
12
7.5
28
0.28
W/°C
mJ
W
°C
A
TO-220
FULLPAK
UNIT
V
Notes
a. Limited by maximum junction temperature.
b. V
DD
= 50 V, starting T
J
= 25 °C, L = 2.5 mH, R
g
= 25
Ω,
I
AS
= 12 A.
c. Repetitive rating; pulse width limited by maximum junction temperature.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91388
S10-0969-Rev. B, 26-Apr-10
www.vishay.com
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