SIHF840LCL,SIHF840LCL-E3,SIHF840LCS,SIHF840LCS-E3,SIHF840LCST

Part No.:
SIHF840LCL,SIHF840LCL-E3,SIHF840LCS,SIHF840LCS-E3,SIHF840LCST
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Description:
Power MOSFET
File Size:
1029 K
Page:
8 Pages
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Maker:
VISHAY [ VISHAY TELEFUNKEN ]
PCB Prototype

July 19, 2018:

SIHFU9110-E3

SK39B

SMAW250G-15G

SN54ABT16657_08

SN54HCT541_08

SN54LV245AW

SN7416N

SN74ABT827PW

SN74ACT374PWR

SN74AHCT273PWR

SN74AUC1G74_07

SN74HC42N

PCB Datasheet:1PCB Datasheet:1
IRF840LCS, IRF840LCL, SiHF840LCS, SiHF840LCL
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(Ω)
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= 10 V
39
10
19
Single
D
FEATURES
500
0.85
Ultra Low Gate Charge
Reduced Gate Drive Requirement
Enhanced 30 V V
GS
Rating
Reduced C
iss
, C
oss
, C
rss
Extremely High Frequency Operation
Repetitive Avalanche Rated
Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
DESCRIPTION
This new series of low charge Power MOSFETs achieve
significantly lower gate charge then conventional Power
MOSFETs. Utilizing the new LCDMOS (low charge device
Power MOSFETs) technology, the device improvements are
achieved without added product cost, allowing for reduced
gate drive requirements and total system savings. In
addition, reduced switching losses and improved efficiency
are achievable in a variety of high frequency applications.
Frequencies of a few MHz at high current are possible using
the new low charge Power MOSFETs.
These device improvements combined with the proven
ruggedness and reliability that characterize Power
MOSFETs offer the designer a new power transistor
standard for switching applications.
I
2
PAK
(TO-262)
D
2
PAK
(TO-263)
G
G
D
S
S
N-Channel
MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
Note
a. See device orientation.
D
2
PAK (TO-263)
IRF840LCSPbF
SiHF840LCS-E3
IRF840LCS
SiHF840LCS
D
2
PAK (TO-263)
-
-
IRF840LCSTRR
a
SiHF840LCST
a
I
2
PAK (TO-262)
IRF840LCLPbF
SiHF840LCL-E3
IRF840LCL
SiHF840LCL
ABSOLUTE MAXIMUM RATINGS
T
C
= 25 °C, unless otherwise noted
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain
Linear Derating Factor
Single Pulse Avalanche Energy
b, e
Avalanche Current
a
Repetiitive Avalanche Energy
a
Maximum Power Dissipation
T
C
= 25 °C
T
A
= 25 °C
Current
a, e
V
GS
at 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
E
AS
I
AR
E
AR
P
D
LIMIT
500
± 30
8.0
5.1
28
1.0
510
8.0
13
3.1
125
3.5
- 55 to + 150
300
d
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
dV/dt
Peak Diode Recovery dV/dt
c, e
Operating Junction and Storage Temperature Range
T
J
, T
stg
Soldering Recommendations (Peak Temperature)
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
J
= 25 °C, L = 14 mH, R
G
= 25
Ω,
I
AS
= 8.0 A (see fig. 12).
c. I
SD
8.0 A, dI/dt
100 A/µs, V
DD
V
DS
, T
J
150 °C.
d. 1.6 mm from case.
e. Uses IRF840LC/SiHF840LC data and test conditions.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91068
S-Pending-Rev. A, 02-Jun-08
WORK-IN-PROGRESS
www.vishay.com
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